第三代半导体紫外探测材料及器件关键技术

国家重点研发计划战略性先进电子材料重点专项

项目成果 当前位置:首页 >> 项目成果 >> 项目成果

发表论文:

1. Sen Yang, Dong Zhou, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, and Youdou Zheng, “High-performance  4H-SiC p-i-n Ultraviolet Photodiode  with p Layer Formed by Al implantation”, IEEE Photonics Technology Letters,  Vol. 28, No. 11. pp. 1189-1192, 2016.

2. Sen Yang, Dong Zhou, Hai Lu, Dunjun Chen, Fangfang Ren, Rong Zhang, and Youdou Zheng, “4H-SiC p-i-n Ultraviolet Avalanche Photodiodes Obtained by Al implantation”, IEEE Photonics Technology Letters,  Vol. 28, No. 11. pp. 1185-1188, 2016.

3. Xiaolong Cai, Dong Zhou, Sen Yang, Hai Lu, Dunjun Chen, Fangfang Ren,  Rong Zhang, and Youdou Zheng, “4H-SiC SACM Avalanche Photodiode with Low Breakdown Voltage and High UV Detection Efficiency”, IEEE Photonics Journal,Vol. 8, No. 5. pp. 1-7, 2016.

4. Lianghui Li, Dong Zhou, Fei Liu, Hai Lu, Fangfang Ren, Dunjun Chen, Rong Zhang, and Youdou Zheng,“High Fill-Factor 4H-SiC Avalanche Photodiodes With Partial Trench Isolation”, IEEE Photonics Technology Letters,Vol.28, No. 2. pp. 2526-2528, 2016.


Copyright @ 2016 南京大学宽禁带半导体器件与微纳光电实验室 All rights Reserved 

地址:江苏省南京栖霞区仙林大道163号 邮箱:hailu@nju.edu.cn 技术支持:山楂科技